? 2014 ixys corporation, all rights reserved IXYH50N65C3D1 v ces = 650v i c110 = 50a v ce(sat) ??? ??? ??? ??? ??? ? ? ? ? ? 2.10v t fi(typ) = 26ns ds100628(9/14) extreme light punch through igbt for 20-60 khz switching features ? optimized for 20-60khz switching ? square rbsoa ? anti-parallel fast diode ? avalanche rated ? short circuit capability ? international standard package advantages ? high power density ? extremely rugged ? low gate drive requirement applications ? power inverters ? ups ? motor drives ? smps ? pfc circuits ? battery chargers ? welding machines ? lamp ballasts ? high frequency power inverters symbol test conditions characteristic values (t j = 25 ? c, unless otherwise specified) min. typ. max. bv ces i c = 250 ? a, v ge = 0v 650 v v ge(th) i c = 250 ? a, v ce = v ge 3.5 6.0 v i ces v ce = v ces , v ge = 0v 50 ? a t j = 150 ? c 1.25 ma i ges v ce = 0v, v ge = ? 20v ?????????????? 100 na v ce(sat) i c = 36a, v ge = 15v, note 1 1.73 2.10 v t j = 150 ? c 2.10 v advance technical information symbol test conditions maximum ratings v ces t j = 25c to 175c 650 v v cgr t j = 25c to 175c, r ge = 1m ? 650 v v ges continuous 20 v v gem transient 30 v i c25 t c = 25c 132 a i c110 t c = 110c 50 a i f110 t c = 110c 50 a i cm t c = 25c, 1ms 250 a i a t c = 25c 25 a e as t c = 25c 400 mj ssoa v ge = 15v, t vj = 150c, r g = 5 ? i cm = 100 a (rbsoa) clamped inductive load @v ce ? v ces t sc v ge = 15v, v ce = 360v, t j = 150c 8 s (scsoa) r g = 82 ? , non repetitive p c t c = 25c 600 w t j -55 ... +175 c t jm 175 c t stg -55 ... +175 c t l maximum lead temperature for soldering 300 c t sold 1.6 mm (0.062in.) from case for 10s 260 c m d mounting torque 1.13/10 nm/lb.in weight 6 g xpt tm 650v igbt genx3 tm w/ diode g = gate c = collector e = emitter tab = collector to-247 (ixyh) g c e tab
ixys reserves the right to change limits, test conditions, and dimensions. IXYH50N65C3D1 ixys mosfets and igbts are covered 4,835,592 4,931,844 5,049,961 5,237,481 6,162,665 6,404,065 b1 6,683,344 6,727,585 7,005,734 b2 7,157,338b2 by one or more of the following u.s. patents: 4,860,072 5,017,508 5,063,307 5,381,025 6,259,123 b1 6,534,343 6,710,405 b2 6,759,692 7,063,975 b2 4,881,106 5,034,796 5,187,117 5,486,715 6,306,728 b1 6,583,505 6,710,463 6,771,478 b2 7,071,537 notes: 1. pulse test, t ? 300 s, duty cycle, d ? 2%. 2. switching times & energy losses may increase for higher v ce (clamp), t j or r g . e ?? p to-247 outline 1 2 3 terminals: 1 - gate 2 - collector 3 - emitted dim. millimeter inches min. max. min. max. a 4.7 5.3 .185 .209 a 1 2.2 2.54 .087 .102 a 2 2.2 2.6 .059 .098 b 1.0 1.4 .040 .055 b 1 1.65 2.13 .065 .084 b 2 2.87 3.12 .113 .123 c .4 .8 .016 .031 d 20.80 21.46 .819 .845 e 15.75 16.26 .610 .640 e 5.20 5.72 0.205 0.225 l 19.81 20.32 .780 .800 l1 4.50 .177 ? p 3.55 3.65 .140 .144 q 5.89 6.40 0.232 0.252 r 4.32 5.49 .170 .216 s 6.15 bsc 242 bsc reverse diode (fred) symbol test conditions characteristic values (t j = 25c unless otherwise specified) min. typ. max. v f i f = 30a, v ge = 0v, note 1 2.5 v t j = 150c 1.35 v i rr t j = 150c 20 a t rr t j = 150c 115 ns r thjc 0.60 c/w i f = 30a, v ge = 0v, -di f /dt = 500a/ s, v r = 400v advance technical information the product presented herein is under development. the technical specifications offered are derived from a subjective evaluation of the design, based upon prior knowledge and experience, and constitute a "considered reflection" of the anticipated result. ixys reserves the right to change limits, test conditions, and dimensions without notice. symbol test conditions characteristic values (t j = 25c unless otherwise specified) min. typ. max. g fs i c = 36a, v ce = 10v, note 1 18 30 s c ie s 2290 pf c oes v ce = 25v, v ge = 0v, f = 1mhz 230 pf c res 50 pf q g(on) 86 nc q ge i c = 36a, v ge = 15v, v ce = 0.5 ? v ces 14 nc q gc 40 nc t d(on) 20 ns t ri 36 ns e on 0.80 mj t d(off) 90 ns t fi 26 ns e of f 0.47 0.80 mj t d(on) 19 ns t ri 37 ns e on 1.60 mj t d(off) 113 ns t fi 32 ns e off 0.70 mj r thjc 0.25 c/w r thcs 0.21 c/w inductive load, t j = 25c i c = 36a, v ge = 15v v ce = 400v, r g = 5 ? note 2 inductive load, t j = 150c i c = 36a, v ge = 15v v ce = 400v, r g = 5 ? note 2
? 2014 ixys corporation, all rights reserved IXYH50N65C3D1 fig. 1. output characteristics @ t j = 25oc 0 10 20 30 40 50 60 70 00.511.522.53 v ce (v) i c (a) v ge = 15v 13v 12v 11v 6v 7v 9v 8v 10v fig. 2. extended output characteristics @ t j = 25oc 0 40 80 120 160 200 240 280 0 5 10 15 20 25 30 v ce (v) i c (a) v ge = 15v 8v 7v 9v 11v 13v 12v 14v 10v fig. 3. output characteristics @ t j = 150oc 0 10 20 30 40 50 60 70 0.00.51.01.52.02.53.03.54.0 v ce - volts i c (a) v ge = 15v 13v 11v 9v 7v 6v 5v 8v 10v fig. 4. dependence of v ce(sat) on junction temperature 0.6 0.8 1.0 1.2 1.4 1.6 1.8 2.0 -50 -25 0 25 50 75 100 125 150 175 t j (oc) v ce(sat) - normalized v ge = 15v i c = 36a i c = 18a i c = 72a fig. 5. collector-to-emitter voltage vs. gate-to-emitter voltage 1.0 1.5 2.0 2.5 3.0 3.5 4.0 4.5 5.0 7 8 9 101112131415 v ge (v) v ce (v) i c = 72a t j = 25oc 36a 18a fig. 6. input admittance 0 10 20 30 40 50 60 70 80 90 100 45678910 v ge (v) i c (a) t j = 150oc 25oc - 40oc
ixys reserves the right to change limits, test conditions, and dimensions. IXYH50N65C3D1 fig. 11. maximum transient thermal impedance 0.01 0.1 1 0.00001 0.0001 0.001 0.01 0.1 1 pulse width (s) z (th)jc - oc / w fig. 12. maximum transient thermal impedance (igbt) aa ss s 0.4 fig. 7. transconductance 0 5 10 15 20 25 30 35 40 45 0 102030405060708090100 i c (a) g f s (s) t j = - 40oc 25oc 150oc fig. 10. reverse-bias safe operating area 0 20 40 60 80 100 100 200 300 400 500 600 700 v ce (v) i c (a) t j = 150oc r g = 5 ? dv / dt < 10v / ns fig. 8. gate charge 0 2 4 6 8 10 12 14 16 0 102030405060708090 q g (nc) v ge (v) v ce = 325v i c = 36a i g = 10ma fig. 9. capacitance 10 100 1,000 10,000 0 5 10 15 20 25 30 35 40 v ce (v) capacitance (pf ) f = 1 mh z c ies c oes c res fig. 11. forward-bias safe operating area 0.1 1 10 100 1000 1 10 100 1000 v ds (v) i d - amperes t j = 175oc t c = 25oc single pulse 25s 1ms 10ms v ce(sat) limi t 100s dc
? 2014 ixys corporation, all rights reserved IXYH50N65C3D1 fig. 13. inductive switching energy loss vs. gate resistance 0.0 0.4 0.8 1.2 1.6 2.0 2.4 2.8 3.2 5 10152025303540455055 r g ( ? ) e off (mj) 0 1 2 3 4 5 6 7 8 e on (mj) e off e on - - - - t j = 150oc , v ge = 15v v ce = 400v i c = 36a i c = 72a fig. 16. inductive turn-off switching times vs. gate resistance 0 20 40 60 80 100 120 5 10152025303540455055 r g ( ? ) t f i (ns) 0 80 160 240 320 400 480 t d(off) (ns) t f i t d(off) - - - - t j = 150oc, v ge = 15v v ce = 400v i c = 72a i c = 36a fig. 14. inductive switching energy loss vs. collector current 0.0 0.4 0.8 1.2 1.6 2.0 2.4 15 20 25 30 35 40 45 50 55 60 65 70 75 i c (a) e off (mj) 0 1 2 3 4 5 6 e on (mj) e off e on - - - - r g = 5 ? , v ge = 15v v ce = 400v t j = 150oc t j = 25oc fig. 15. inductive switching energy loss vs. junction temperature 0.0 0.4 0.8 1.2 1.6 2.0 2.4 2.8 25 50 75 100 125 150 t j (oc) e off (mj) 0 1 2 3 4 5 6 7 e on (mj) e off e on - - - - r g = 5 ? , v ge = 15v v ce = 400v i c = 36a i c = 72a fig. 17. inductive turn-off switching times vs. collector current 10 20 30 40 50 60 70 80 90 15 20 25 30 35 40 45 50 55 60 65 70 75 i c (a) t f i (ns) 40 60 80 100 120 140 160 180 200 t d(off) (ns) t f i t d(off) - - - - r g = 5 ? , v ge = 15v v ce = 400v t j = 150oc t j = 25oc fig. 18. inductive turn-off switching times vs. junction temperature 0 20 40 60 80 100 120 25 50 75 100 125 150 t j (oc) t f i (ns) 40 60 80 100 120 140 160 t d(off) (ns) t f i t d(off) - - - - r g = 5 ? , v ge = 15v v ce = 400v i c = 72a i c = 36a
ixys reserves the right to change limits, test conditions, and dimensions. IXYH50N65C3D1 fig. 20. inductive turn-on switching times vs. collector current 0 20 40 60 80 100 120 15 20 25 30 35 40 45 50 55 60 65 70 75 i c (a) t r i (ns) 13 16 19 22 25 28 31 t d(on) (ns) t r i t d(on) - - - - r g = 5 ? , v ge = 15v v ce = 400v t j = 150oc t j = 25oc fig. 21. inductive turn-on switching times vs. junction temperature 0 20 40 60 80 100 120 140 25 50 75 100 125 150 t j (oc) t r i (ns) 18 19 20 21 22 23 24 25 t d(on) - nanoseconds t r i t d(on) - - - - r g = 5 ? , v ge = 15v v ce = 400v i c = 72a i c = 36a fig. 19. inductive turn-on switching times vs. gate resistance 0 20 40 60 80 100 120 140 160 180 5 10152025303540455055 r g ( ? ) t r i (ns) 0 10 20 30 40 50 60 70 80 90 t d ( on ) (ns) t r i t d(on) - - - - t j = 150oc, v ge = 15v v ce = 400v i c = 36a i c = 72a fig. 22. maximum peak load current vs. frequency 10 20 30 40 50 60 70 80 90 100 10 100 1000 f max (kh) i c (a) t j = 150oc t c = 75oc v ce = 400v v ge = 15v r g = 5 ? duty cycle = 0.5 square wave triangular wave
? 2014 ixys corporation, all rights reserved ixys ref: ixy_50n65c3d1(5d) 9-03-14 IXYH50N65C3D1 fig. 23. diode forward characteristics 0 20 40 60 80 100 120 00.511.5 22.533.5 v f (v) i f (a) t j = 150oc t j = 25oc fig. 24. reverse recovery charge vs. -di f /dt 0.8 1.0 1.2 1.4 1.6 1.8 2.0 200 300 400 500 600 700 800 900 1000 1100 1200 -di f / dt (a/s) q rr (c) t vj = 150oc v r = 400v i f = 60a 15a 30a fig. 25. reverse recovery current vs. -di f /dt 10 12 14 16 18 20 22 24 26 28 30 32 200 300 400 500 600 700 800 900 1000 1100 1200 di f /dt (a/s) i rr (a) t vj = 150oc v r = 400v 15a 30a i f = 60a fig. 26. reverse recovery time vs. -di f /dt 60 80 100 120 140 160 180 200 300 400 500 600 700 800 900 1000 1100 1200 -di f /dt (a/s) t rr (ns) t vj = 150oc v r = 400v 30a 15a i f = 60a fig. 28. maximum transient thermal impedance (diode) 0.01 0.1 1 0.00001 0.0001 0.001 0.01 0.1 1 10 pulse width (s) z (th)jc (oc / w) fig. 27. dynamic parameters q rr, i rr vs. junction temperature 0 0.2 0.4 0.6 0.8 1 1.2 0 20 40 60 80 100 120 140 160 t j (oc) k f k f i rr k f q rr v r = 400v i f = 30a -di f /dt = 500 a/s
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